A Laterally Excited Bulk Acoustic Wave Resonator towards High Figure-of-Merit in Radio-Frequency Applications

Author:

Tong Xin1,Zhou Jie1,Wen Zhiwei1,Fan Yuchen1,Liu Jieyu1,Liu Yan1,Liu Wenjuan1,Soon Bo Woon2,Cai Yao1,Sun Chengliang1

Affiliation:

1. Wuhan University,The Institute of Technological Sciences,Wuhan,China,430072

2. Hubei Yangtze Memory Laboratories,Wuhan,China,430205

Publisher

IEEE

Reference9 articles.

1. Lithium Niobate Thin Film Based A3 Mode Resonators with High Effective Coupling Coefficient of 6.72%

2. 5 GHz lithium niobate MEMS resonators with high FOM of 153;y;2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS) MEMS,2017

3. 5 GHz laterally‐excited bulk‐wave resonators (XBARs) based on thin platelets of lithium niobate

4. 1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators;c;IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control,2010

5. Green's function analysis of Lamb wave resonators;j;2008 IEEE Ultrasonics Symposium,2008

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2. A Lamb Wave Resonator with Trapezoidal Interdigitated Electrodes;2024 IEEE MTT-S International Conference on Microwave Acoustics & Mechanics (IC-MAM);2024-05-13

3. High figure-of-merit A1-mode lamb wave resonators operating around 6 GHz based on the LiNbO3 thin film;Journal of Physics D: Applied Physics;2024-04-23

4. Analytically assisted FEM approach for the design and optimization of laterally excited bulk acoustic wave resonators (XBARs) with a high electromechanical coupling;Applied Physics A;2024-04-02

5. 6 GHz Lithium Niobate Lamb Wave Resonators with A High Quality Factor Implemented by Groove Structures;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

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