A Laterally Excited Bulk Acoustic Wave Resonator towards High Figure-of-Merit in Radio-Frequency Applications
Author:
Affiliation:
1. Wuhan University,The Institute of Technological Sciences,Wuhan,China,430072
2. Hubei Yangtze Memory Laboratories,Wuhan,China,430205
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10106786/10106791/10107320.pdf?arnumber=10107320
Reference9 articles.
1. Lithium Niobate Thin Film Based A3 Mode Resonators with High Effective Coupling Coefficient of 6.72%
2. 5 GHz lithium niobate MEMS resonators with high FOM of 153;y;2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS) MEMS,2017
3. 5 GHz laterally‐excited bulk‐wave resonators (XBARs) based on thin platelets of lithium niobate
4. 1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators;c;IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control,2010
5. Green's function analysis of Lamb wave resonators;j;2008 IEEE Ultrasonics Symposium,2008
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