Low Temperature Evaluation of Silicon Carbide (SiC) based Converter-Reference-Cited by-同舟云学术

Low Temperature Evaluation of Silicon Carbide (SiC) based Converter

Published:2022-03-20 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Wei Yuqi¹,Hossain Md Maksudul¹,Mantooth H. Alan¹

Affiliation:

1. University of Arkansas,Fayetteville,Arkansas,United States

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9773364/9773365/09773453.pdf?arnumber=9773453

Reference22 articles.

1. Characterization of Wide Bandgap Semiconductor Devices for Cryogenically-Cooled Power Electronics in Aircraft Applications;zhang;2018 AIAA/IEEE Electric Aircraft Technologies Symposium (EATS) AIAA/IEEE EATS,2018

2. Cryogenic and high temperature performance of 4H-SiC power MOSFETs

3. Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

4. Performance Evaluation of 650 V SiC MOSFET Under Low Temperature Operation

5. Characterization of 1.2 kV SiC Power MOSFETs at Cryogenic Temperatures

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1. Review of semiconductor devices and other power electronics components at cryogenic temperature;iEnergy;2024-06

2. GaN HEMT and Air Core Magnetics based Power Converters Evaluations at Cryogenic Temperature;IOP Conference Series: Materials Science and Engineering;2024-05-01

3. Evaluation and Modeling of SiC Based Power Converter for Low Temperature Operation;IEEE Transactions on Industry Applications;2023-05

4. Multilevel Inverters for Electric Aircraft Applications: Current Status and Future Trends;IEEE Transactions on Transportation Electrification;2023