A K-Band Voltage-Controlled Oscillator with Gate-Drain Phase Shift Achieving 110 kHz 1/f3 Corner
Author:
Affiliation:
1. Fudan University,State Key Laboratory of ASIC and System,China
2. Huazhong University of Science and Technology,School of Integrated Circuits,China
Funder
Science and Technology Commission of Shanghai Municipality
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10599936/10599927/10600047.pdf?arnumber=10600047
Reference7 articles.
1. A Ka-Band SATCOM Transceiver in 65-nm CMOS With High-Linearity TX and Dual-Channel Wide-Dynamic-Range RX for Terrestrial Terminal
2. Analysis of a 28-nm CMOS Fast-Lock Bang-Bang Digital PLL With 220-fs RMS Jitter for Millimeter-Wave Communication
3. A Low-Flicker-Noise 30-GHz Class-F23 Oscillator in 28-nm CMOS Using Implicit Resonance and Explicit Common-Mode Return Path
4. A 0.083-mm2 25.2-to-29.5 GHz Multi-LC-Tank Class-F234 VCO With a 189.6-dBc/Hz FOM
5. A 12.5-to-15.4GHz, -118.9dBc/Hz PN at 1MHz offset, and 191.0dBc/Hz FoM VCO with common-mode resonance expansion and simultaneous differential 2nd-harmonic output using a single three-coil transformer in 65nm CMOS;Mai
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