Quantum distributed model of the resonant tunneling transistor-Reference-Cited by-同舟云学术

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Quantum distributed model of the resonant tunneling transistor

Published:1994-03 Issue:3 Volume:41 Page:294-298
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Taniyama H.,Tomizawa M.,Yoshii A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/6817/00275212.pdf?arnumber=275212

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Study of APCVD-Deposited TiO2Characteristics in the Structure of a Tunneling Transistor;MRS Proceedings;2004

2. Circuits and simulations at 1THz;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;1996-10-15

3. The study of δ-doping resonant interband tunneling diode;Materials Science and Engineering: B;1995-12

4. Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal (CoSi2)/Insulator (CaF2) Heterostructures and Influence of Parasitic Circuit Elements;Japanese Journal of Applied Physics;1995-08-30

5. Epitaxial growth of a metal(CoSi2)/insulator(CaF2) nanometer‐thick heterostructure and its application to quantum‐effect devices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-05

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