A 380 V/50 kVar SiC-SVG Achieving a Power Density of 1.652 kVar/L With the Optimization of Heatsink and Output Filter Volume
Author:
Affiliation:
1. College of Electrical Engineering, Zhejiang University, Hangzhou, China
2. College of Electrical Engineering and Automation, Fuzhou University, Fuzhou, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology
Link
http://xplorestaging.ieee.org/ielx7/6245517/9852721/09698198.pdf?arnumber=9698198
Reference34 articles.
1. A General Cuboidal Element for Three-Dimensional Thermal Modelling
2. Loss Analysis and Mapping of a SiC MOSFET Based Segmented Two-Level Three-Phase Inverter for EV Traction Systems
3. Power Loss, System Efficiency, and Leakage Current Comparison Between Si IGBT VFD and SiC FET VFD With Various Filtering Options
4. Thermal Modeling of Inductor and Transformer Windings Including Litz Wire
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