Investigation on Optimal Switching Oscillation Suppression for SiC MOSFET by Inductively Coupled Damping-Reference-Cited by-同舟云学术

Investigation on Optimal Switching Oscillation Suppression for SiC MOSFET by Inductively Coupled Damping

Published:2023-02 Issue:1 Volume:11 Page:667-678
ISSN:2168-6777
Container-title:IEEE Journal of Emerging and Selected Topics in Power Electronics
language:
Short-container-title:IEEE J. Emerg. Sel. Topics Power Electron.

Author:

Li Jiawen¹,Yang Xin²^ORCID,Xu Mengwei²^ORCID,Ding Yifei³^ORCID,Wang Lei²^ORCID,Wang Jun²^ORCID

Affiliation:

1. Department of Electric Power Engineering, Jiangxi Electric Vocational and Technical College, Nanchang, China

2. School of Electrical and Information Engineering, Hunan University, Changsha, China

3. State Grid Jiangsu Electric Power Company Ltd., Suzhou, China

Funder

National Natural Science Foundation of China

Huxiang High-Level Talents Gathering Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

Reference40 articles.

3. Detail study of SiC MOSFET switching characteristics;li;Proc IEEE 5th Int Symp Power Electron Distrib Gener Syst (PEDG),2014

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