Next-Generation Variable Capacitors to Reduce Capacitance Variable Time Using SiC MOSFETs and PIN Diodes in 13.56MHz RF Plasma Systems-Reference-Cited by-同舟云学术

Next-Generation Variable Capacitors to Reduce Capacitance Variable Time Using SiC MOSFETs and PIN Diodes in 13.56MHz RF Plasma Systems

Published:2021 Issue: Volume: Page:1-1
ISSN:2168-6777
Container-title:IEEE Journal of Emerging and Selected Topics in Power Electronics
language:
Short-container-title:IEEE J. Emerg. Sel. Topics Power Electron.

Author:

Min Juhwa¹,Chae Beomseok¹,Suh Yongsug²,Kim Jinho³,Kim Hyunbae³

Affiliation:

1. Department of Electrical Engineering Jeonbuk National University Jeonju-si, Korea.

2. Department of Electrical Engineering Jeonbuk National University Jeonju-si, Korea. (e-mail: ysuh@jbnu.ac.kr)

3. Manufacturing Technology Center Samsung Electronics Hwaseong-si, Korea.

Funder

National Research Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

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3. Resonance Type Electrical Variable Capacitor with Reduced Active Devices Loss for 13.56 MHz RF Plasma System;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17