Comparison of neutral electron trap generation by hot-carrier stress in n-MOSFET's with oxide and oxynitride gate dielectrics-Reference-Cited by-同舟云学术

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Comparison of neutral electron trap generation by hot-carrier stress in n-MOSFET's with oxide and oxynitride gate dielectrics

Published:1992-07 Issue:7 Volume:13 Page:360-362
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Joshi A.B.,Kwong D.-L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/4971/00192755.pdf?arnumber=192755

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN MIS Capacitors with Photo-CVD SiN[sub x]O[sub y] Insulating Layers;Journal of The Electrochemical Society;2005

2. Electrical characterization of rapid thermal nitrided and re‐oxidized low‐pressure chemical‐vapor‐deposited silicon dioxide metal–oxide–silicon structures;Journal of Applied Physics;1996-02-15

3. Current Transport Through Silicon Oxynitride Films;Journal of The Electrochemical Society;1995-08-01

4. Electrical characterization of rapid thermal nitrided and reoxidized plasma‐enhanced chemical‐vapor‐deposited silicon dioxide metal‐oxide‐silicon structures;Journal of Applied Physics;1994-12-15

5. Effects of AC hot carrier stress on n- and p-MOSFET's with oxynitride gate dielectrics;IEEE Transactions on Electron Devices;1994-05

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