Author:
Aubuchon K. G.,Bereisa J.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
4 articles.
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1. Swift heavy-ion induced trap generation and mixing at Si/SiO2 interface in depletion n-MOS;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
2. Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-07
3. Radiation Hardened CMNOS/SOS Mask Programmable Rom and General Processor Unit;IEEE Transactions on Nuclear Science;1977-12
4. Radiation Damage;Semiconducting Devices;1976