Characterization & modeling of low electric field gate-induced-drain-leakage [MOSFET]-Reference-Cited by-同舟云学术

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Characterization & modeling of low electric field gate-induced-drain-leakage [MOSFET]

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Container-title:Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516)
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Author:

Rideau D.,Dray A.,Gilibert F.,Agut F.,Giguerre L.,Gouget G.,Minondo M.,Juge A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9153/29056/01309469.pdf?arnumber=1309469

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET;2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2021-11-24

2. Compact Modeling of Temperature-Dependent Gate-Induced Drain Leakage Including Low-Field Effects;IEEE Transactions on Electron Devices;2019-07

3. High temperature study of flexible silicon-on-insulator fin field-effect transistors;Applied Physics Letters;2014-09-29

4. Hole Transport in Strained $\hbox{Si}_{0.5} \hbox{Ge}_{0.5}$ QW-MOSFETs With $\langle\hbox{110}\rangle$ and $\langle\hbox{100}\rangle$ Channel Orientations;IEEE Electron Device Letters;2012-08

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