Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors-Reference-Cited by-同舟云学术

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Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors

Published:2016-03 Issue: Volume: Page:
ISSN:
Container-title:2016 International Conference on Microelectronic Test Structures (ICMTS)
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Author:

Kuroda Rihito,Teramoto Akinobu,Sugawa Shigetoshi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7469603/7476153/07476172.pdf?arnumber=7476172

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm Process;IEEE Journal of the Electron Devices Society;2021

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