A 94 GHz Bandwidth Transimpedance Amplifier in 55nm SiGe BiCMOS for High Speed Optical Receivers-Reference-Cited by-同舟云学术

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A 94 GHz Bandwidth Transimpedance Amplifier in 55nm SiGe BiCMOS for High Speed Optical Receivers

Published:2024-01-21 Issue: Volume: Page:63-66
ISSN:
Container-title:2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
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Author:

Cuskelly Lachlan¹,Falt Christopher²,Schvan Peter²

Affiliation:

1. University of California, Los Angeles,Electrical and Computer Engineering,Los Angeles,California

2. ASIC Design Ciena Corporation,Ottawa,Canada

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10438445/10438446/10438542.pdf?arnumber=10438542

Reference10 articles.

1. DC-to-15- and DC-to-30-GHz CMOS distributed transimpedance amplifiers

2. A 92GHz bandwidth SiGe BiCMOS HBT TIA with less than 6dB noise figure

3. Differential common base TIA with 56 dB Ohm gain and 45 GHz bandwidth in 130 nm SiGe

4. A 3–25 Gb/s Four-Channel Receiver With Noise-Canceling TIA and Power-Scalable LA

5. A 107 GHz 55 dB-Ohm InP Broadband Transimpedance Amplifier IC for High-Speed Optical Communication Links

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