登录 注册 会员服务 联系我们

Compact Modeling of Surface Potential, Charge, and Current in Nanoscale Transistors Under Quasi-Ballistic Regime

  • Published:2016-11 Issue:11 Volume:63 Page:4151-4159
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Dasgupta AvirupORCID,Agarwal Amit,Khandelwal Sourabh,Chauhan Yogesh Singh

Funder

Ramanujan fellowship research grant

Council of Scientific and Industrial Research, India

Science and Engineering Research Board, India

Semiconductor Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Physics-Based Compact Model for Silicon Cold-Source Transistors;IEEE Transactions on Electron Devices;2023-04

2. An optimized nanoscale Quasi-Ballistic DG MOSFET model with diffusive carrier scattering dependency;International Journal of Electronics;2022-05-05

3. Proposal of Ferroelectric Based Electrostatic Doping for Nanoscale Devices;IEEE Electron Device Letters;2021-04

4. Analytical model for quasi-ballistic transport in MOSFET including carrier backscattering;Journal of Computational Electronics;2021-02-24

5. Compact Modeling of Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport;2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2020-04
同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3