Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback-Reference-Cited by-同舟云学术

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Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback

Published:2016-04 Issue:4 Volume:63 Page:1533-1538
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Joe Sung-Min,Kang Ho-Jung,Choi Nagyong,Kang Myounggon,Park Byung-Gook,Lee Jong-Ho

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7438947/7428923.pdf?arnumber=7428923

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4. Design of a Novel One Transistor-Dram Based on Bulk Silicon Substrate;2020 China Semiconductor Technology International Conference (CSTIC);2020-06-26

5. Understanding of Feedback Field-Effect Transistor and Its Applications;Applied Sciences;2020-04-28

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