Buffer Layer Engineering for High ( $\geq 10^{\mathrm {13}}$ cm $^{\mathrm {-2}}$ ) 2-DEG Density in ZnO-Based Heterostructures-Reference-Cited by-同舟云学术

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Buffer Layer Engineering for High ( $\geq 10^{\mathrm {13}}$ cm $^{\mathrm {-2}}$ ) 2-DEG Density in ZnO-Based Heterostructures

Published:2017-03 Issue:3 Volume:64 Page:1015-1019
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Khan Md Arif,Singh Rohit,Mukherjee Shaibal,Kranti Abhinav^ORCID

Funder

DST, Government of India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7862872/07820034.pdf?arnumber=7820034

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. A physics-based analytical model for ZnO based HEMT;Micro and Nanostructures;2023-12

4. Study and Comparative Analysis of InAs and GaN-Based High Electron Mobility Transistors;2023 14th International Conference on Computing Communication and Networking Technologies (ICCCNT);2023-07-06

5. Impact of Yttria Spacer on the Performance of MgZnO/CdZnO Heterostructure;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

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