A novel interdigitated, inductively tuned, capacitive shunt RF — MEMS switch for X and K bands applications-Reference-Cited by-同舟云学术

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A novel interdigitated, inductively tuned, capacitive shunt RF — MEMS switch for X and K bands applications

Published:2014-04 Issue: Volume: Page:
ISSN:
Container-title:The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
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Author:

Angira Mahesh,Sundaram G. M.,Rangra Kamaljit

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6894723/6908740/06908777.pdf?arnumber=6908777

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and simulation of RF MEMS shunt capacitive switch with non-uniform meanders for C-band applications;Microsystem Technologies;2020-03-16

2. A novel design for low insertion loss, multi-band RF-MEMS switch with low pull-in voltage;Engineering Science and Technology, an International Journal;2016-03

3. A Novel Approach for Low Insertion Loss, Multi-band, Capacitive Shunt RF–MEMS Switch;Wireless Personal Communications;2015-03-14

4. A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch;Microsystem Technologies;2014-11-26

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