Performance comparison of 1200V Silicon and SiC devices for UPS application-Reference-Cited by-同舟云学术

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Performance comparison of 1200V Silicon and SiC devices for UPS application

Published:2010-11 Issue: Volume: Page:
ISSN:
Container-title:IECON 2010 - 36th Annual Conference on IEEE Industrial Electronics Society
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Author:

McBryde James,Kadavelugu Arun,Compton Bobby,Bhattacharya Subhashish,Das Mrinal,Agarwal Anant

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5661635/5674827/05675125.pdf?arnumber=5675125

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination;Solid State Phenomena;2024-08-23

2. Comparison of 1700-V SiC-MOSFET and Si-IGBT Modules Under Identical Test Setup Conditions;IEEE Transactions on Industry Applications;2019-11

3. Ohmic contacts simultaneously formed on n-type and p-type 4H-SiC at low temperature;Journal of Alloys and Compounds;2019-10

4. Power Electronics;Power Systems;2019-09-20

5. Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application;2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia);2019-05

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