The black silicon method. VI. High aspect ratio trench etching for MEMS applications-Reference-Cited by-同舟云学术

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The black silicon method. VI. High aspect ratio trench etching for MEMS applications

Published: Issue: Volume: Page:
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Container-title:Proceedings of Ninth International Workshop on Micro Electromechanical Systems
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Author:

Jansen H.,de Boer M.,Elwenspoek M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/3559/10653/00493989.pdf?arnumber=493989

Cited by 63 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cryogenic etching of silicon compounds using a CHF3 based plasma;Journal of Applied Physics;2023-03-21

2. Method for Keyhole-Free High-Aspect-Ratio Trench Refill by LPCVD;Micromachines;2022-11-04

3. OES diagnostics as a universal technique to control the Si etching structures profile in ICP;Scientific Reports;2022-03-28

4. Ultrahigh aspect ratio etching of silicon in SF6-O2 plasma: The clear-oxidize-remove-etch (CORE) sequence and chromium mask;Journal of Vacuum Science & Technology A;2020-09

5. Low-temperature smoothing method of scalloped DRIE trench by post-dry etching process based on SF6 plasma;Micro and Nano Systems Letters;2020-08-03

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