Low Temperature Double Pulse Test Platform for Testing Power Modules
Author:
Affiliation:
1. Mechanical and Mechatronics Systems Research Laboratories / Industrial Technology Research Institute,Chutung, Hsinchu,Taiwan,R.O.C.,31057
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10348606/10348630/10348830.pdf?arnumber=10348830
Reference9 articles.
1. Dynamic Behavior of a Medium-Voltage N-Channel SiC-IGBT With Ultrafast Switching Performance of 300 kV/μs
2. Methodology for Wide Band-Gap Device Dynamic Characterization
3. Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance
4. Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode
5. Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors
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