A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's-Reference-Cited by-同舟云学术

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A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's

Published:1996-08 Issue:8 Volume:43 Page:1264-1273
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hasnat K.,Yeap C.-F.,Jallepalli S.,Shih W.-K.,Hareland S.A.,Agostinelli V.M.,Tasch A.F.,Maziar C.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/11101/00506778.pdf?arnumber=506778

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