A Circuit-Level SPICE Modeling Strategy for the Simulation of Behavioral Variability in ReRAM-Reference-Cited by-同舟云学术

A Circuit-Level SPICE Modeling Strategy for the Simulation of Behavioral Variability in ReRAM

Published:2022-10-03 Issue: Volume: Page:
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Container-title:2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC)
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Author:

Cayo Jose¹,Vourkas Ioannis¹,Rubio Antonio²

Affiliation:

1. Universidad Tecnica Federico Santa Maria (UTFSM),Dept. of Electronic Engineering,Valparaiso,Chile

2. Universitat Politècnica de Catalunya (UPC),Dept. of Electronic Engineering,Barcelona,Spain

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9939277/9939284/09939587.pdf?arnumber=9939587

Reference17 articles.

1. Simulation of Cycle-to-Cycle Instabilities in SiOx-Based ReRAM Devices Using a Self-Correlated Process With Long-Term Variation;miranda;IEEE Trans Electron Device Letters,2019

2. SPICE modeling of cycle-to-cycle variability in RRAM devices

3. SPICE Compact Modeling of Bipolar/Unipolar Memristor Switching Governed by Electrical Thresholds

4. Stochasticity Modeling in Memristors

5. Exploring Memristor Multi-Level Tuning Dependencies on the Applied Pulse Properties via a Low Cost Instrumentation Setup

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