A Steep Slope Sub-10nm Armchair Phosphorene Nanoribbon FET with Intrinsic Cold Contact
Author:
Affiliation:
1. Indian Institute of Technology Patna,Department of Electrical Engineering,Patna,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10321814/10321836/10321921.pdf?arnumber=10321921
Reference33 articles.
1. Steep-Slope Transistors Based on Chiral Graphene Nanoribbons With Intrinsic Cold Source
2. A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect
3. Production of phosphorene nanoribbons
4. Extending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study
5. Silicene field effect transistor with high on/off current ratio and good current saturation
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