Study of Si IGBT and SiC MOSFET Performance Based on Double-Pulse Test
Author:
Affiliation:
1. Southwest Jiaotong University,School of Electrical Engineering,Chengdu,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10005874/10005887/10006209.pdf?arnumber=10006209
Reference10 articles.
1. An Improved Behavior Model for IGBT Modules Driven by Datasheet and Measurement
2. Active Gate Driving Technique for a 1200 V SiC MOSFET to Minimize Detrimental Effects of Parasitic Inductance in the Converter Layout
3. Characterization and modeling of SiC MOSFET body diode[C];kang;2016 IEEE Applied Power Electronics Conference and Exposition (APEC),2016
4. An Improved Equivalent Circuit Model of SiC MOSFET and Its Switching Behavior Predicting Method
5. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability
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