Investigation on the Retention Reliability of Scaled $ \hbox{SiO}_{2}/\hbox{Al}_{x}\hbox{O}_{y}/\hbox{SiO}_{2}$ Inter-Poly Dielectrics for nand Flash Cell Arrays-Reference-Cited by-同舟云学术

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Investigation on the Retention Reliability of Scaled $ \hbox{SiO}_{2}/\hbox{Al}_{x}\hbox{O}_{y}/\hbox{SiO}_{2}$ Inter-Poly Dielectrics for nand Flash Cell Arrays

Published:2010-04 Issue:4 Volume:31 Page:266-268
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Se Hoon Lee ,Mincheol Park ,Byung Yong Choi ,Suk-Kang Sung ,Tae Hun Kim ,Byongsun Ju ,Dong Chan Kim ,Choong-Ho Lee ,Keonsoo Kim ,Jungdal Choi ,Kinam Kim

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5437354/05419996.pdf?arnumber=5419996

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Hysteresis Phenomenon in Floating-Gate NAND Flash Memory Cells;IEEE Transactions on Electron Devices;2015-09

2. High-Performance Flexible ${\rm Ni}/{\rm Sm}_{2}{\rm O}_{3}/{\rm ITO}$ ReRAM Device for Low-Power Nonvolatile Memory Applications;IEEE Electron Device Letters;2013-09

3. Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3Blocking Layer in Flash Memory Device;Japanese Journal of Applied Physics;2011-04-20

4. Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3Blocking Layer in Flash Memory Device;Japanese Journal of Applied Physics;2011-04-01

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