Impact of Gate Electrodes on $\hbox{1}/f$ Noise of Gate-All-Around Silicon Nanowire Transistors-Reference-Cited by-同舟云学术

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Impact of Gate Electrodes on $\hbox{1}/f$ Noise of Gate-All-Around Silicon Nanowire Transistors

Published:2009-10 Issue:10 Volume:30 Page:1081-1083
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chengqing Wei ,Yu Jiang ,Yong-Zhong Xiong ,Xing Zhou ,Singh N.,Rustagi S.C.,Guo Qiang Lo ,Dim-Lee Kwong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5263237/05235104.pdf?arnumber=5235104

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2. Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs;Solid-State Electronics;2021-10

3. Horizontal, Stacked or Vertical Silicon Nanowires: Does it Matter from a Low-Frequency Noise Perspective?;2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS);2020-09-01

4. Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime;Micromachines;2018-12-22

5. Low Frequency Noise Analysis of Impact of Metal Gate Processing on the Gate Oxide Stack Quality;ECS Journal of Solid State Science and Technology;2018

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