Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories-Reference-Cited by-同舟云学术

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Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories

Published:2009-09 Issue:9 Volume:30 Page:984-986
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Compagnoni C.M.,Ghidotti M.,Lacaita A.L.,Spinelli A.S.,Visconti A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5224033/05191060.pdf?arnumber=5191060

Cited by 64 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monte Carlo Simulator for Threshold Voltage Distribution of 3-D nand Flash Memory Using Machine Learning;IEEE Transactions on Electron Devices;2024-01

2. Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise;IEEE Journal of the Electron Devices Society;2024

3. Codes for Memory Cells with Unreachable Levels;2023 XVIII International Symposium Problems of Redundancy in Information and Control Systems (REDUNDANCY);2023-10-24

4. Modeling 3D NAND Flash with Nonparametric Inference on Regression Coefficients for Reliable Solid-State Storage;Future Internet;2023-09-26

5. Analog Tuning of Floating-Gate Cells with Sub-Elementary Charge Accuracy for In-Memory Computing Applications;2023 IEEE International Memory Workshop (IMW);2023-05

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