Capture Time as a Limit to Pulsed Power in 940 nm Broad Area Diode Lasers
Author:
Affiliation:
1. Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik,Gustav-Kirchhoff-Str. 4,Berlin,Germany,D-12489
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9975352/9975444/09975763.pdf?arnumber=9975763
Reference8 articles.
1. Influence of nonlinear effects on the characteristics of pulsed high-power BA DBR lasers
2. Diode Lasers with Internal Wavelength Stabilization for LiDAR Applications
3. Theory of direct and indirect effect of two-photon absorption on nonlinear optical losses in high power semiconductor lasers
4. Efficiency optimization of high-power GaAs lasers by balancing confinement and threshold
5. Incorporation of carrier capture and escape processes into a self-consistent cw model for Quantum Well lasers
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