Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)-Reference-Cited by-同舟云学术

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Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)

Published:2011-05 Issue: Volume: Page:
ISSN:
Container-title:2011 3rd IEEE International Memory Workshop (IMW)
language:
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Author:

Wong H.-S. Philip,Kim SangBum,Lee Byoungil,Caldwell Marissa A.,Liang Jiale,Wu Yi,Jeyasingh Rakesh,Yu Shimeng

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5871161/5873182/05873188.pdf?arnumber=5873188

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-Rectifying Gr/TMDC Heterostructures: Candidates for Resistive Switching Memory Devices;ACS Applied Electronic Materials;2024-02-07

2. Phase‐Change Logic via Thermal Cross‐Talk for Computation in Memory;physica status solidi (RRL) – Rapid Research Letters;2020-12-10

3. Transforming Technologies to Manage Our Information: The Future of Personal Information Management, Part II;Synthesis Lectures on Information Concepts, Retrieval, and Services;2013-10-24

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