Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia-Reference-Cited by-同舟云学术

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Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia

Published:2002-09 Issue:9 Volume:49 Page:1526-1531
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Tanaka M.,Saida S.,Mizushima I.,Inoue F.,Kojima M.,Tanaka T.,Nakanishi T.,Suguro K.,Tsunashima Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/22079/01027832.pdf?arnumber=1027832

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. COMPOSITION, STRUCTURE, AND FUNCTIONAL PROPERTIES OF THIN SILICON NITRIDE FILMS GROWN BY ATOMIC LAYER DEPOSITION FOR MICROELECTRONIC APPLICATIONS (REVIEW OF 25 YEARS OF RESEARCH);Journal of Structural Chemistry;2022-07

2. Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices;Japanese Journal of Applied Physics;2019-04-29

3. Effect of N2Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH4–NH3–N2–He Gas Mixture on Stress Relaxation of Silicon Nitride;Japanese Journal of Applied Physics;2010-08-20

4. Suppression of hydrogen-ion drift into underlying layers using plasma deposited silicon oxynitride film during high-density plasma chemical vapor deposition;Thin Solid Films;2007-04

5. Thermal redistribution of hydrogen and boron in SiO2 in SiN-capped p-type MOSFET structures;Applied Surface Science;2005-05

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