Impact of High-k Materials and Tube Numbers on CNFET Gate’s Performances-Reference-Cited by-同舟云学术

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Impact of High-k Materials and Tube Numbers on CNFET Gate’s Performances

Published:2023-01-23 Issue: Volume: Page:
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Container-title:2023 5th International Conference on Smart Systems and Inventive Technology (ICSSIT)
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Author:

Yalung Christofer¹,Tantraviwat Doldet²,Uatrongjit Sermsak²,Yamwong Wittawat³

Affiliation:

1. Chiang Mai University,Philosophy Program in Nanoscience and Nanotechnology (International Program/Interdisciplinary),Chiang Mai,Thailand

2. Chiang Mai University,Faculty of Engineering,Department of Electrical Engineering,Chiang Mai,Thailand

3. National Electronics and Computer Technology Center (NECTEC),Thai Microelectronics Center (TMEC),Chachoengsao,Thailand

Funder

Chiang Mai University

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10059461/10060864/10060873.pdf?arnumber=10060873

Reference20 articles.

1. Effects of High-k Dielectric Materials on Electrical Performance of Double Gate and Gate-All-Around MOSFET;kosmani;International Journal of Integrated Engineering,2020

2. Trends in low-power VLSI design;darwish;The Electrical Engineering Handbook,2007

3. Ranking of Pareto-optimal solutions and selecting the best solution in multi- and many-objective optimization problems using R-method

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