Atom Probe Tomography Study of Gettering in High-Performance Multicrystalline Silicon-Reference-Cited by-同舟云学术

Atom Probe Tomography Study of Gettering in High-Performance Multicrystalline Silicon

Published:2020-05 Issue:3 Volume:10 Page:863-871
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Tweddle David¹^ORCID,Hamer Phillip²,Shen Zhao³,Heinz Friedemann D.⁴,Krenckel Patricia⁴^ORCID,Riepe Stephen⁴,Schindler Florian²^ORCID,Wilshaw Peter R.³^ORCID,Moody Michael P.³

Affiliation:

1. Department of Metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, AL, USA

2. School of Photovoltaic and Renewable Energy, The University of New South Wales, Sydney, NSW, Australia

3. Department of Materials, The University of Oxford, Oxford, U.K.

4. Fraunhofer Institut für Solare Energiesysteme, Freiburg, Germany

Funder

Engineering and Physical Sciences Research Council

Australian Renewable Energy Agency

German Federal Ministry

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/9075300/09023557.pdf?arnumber=9023557

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