Influence of the Carbon Concentration on (p) Poly-SiC x Layer Properties With Focus on Parasitic Absorption in Front Side Poly-SiC x /SiO x Passivating Contacts of Solar Cells
Author:
Affiliation:
1. University of Konstanz, Konstanz, Germany
2. Forschungszentrum Jülich GmbH, Institute of Energy and Climate Research, Jülich, Germany
Funder
German Federal Ministry of Economic Affairs and Energy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/5503869/9234083/09205910.pdf?arnumber=9205910
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Silver Metallization with Controlled Etch Stop Using SiOx Layers in Passivating Contacts for Improved Silicon Solar Cell Performance;Solar RRL;2023-09-12
2. 24.18% efficiency TOPCon solar cells enabled by super hydrophilic carbon-doped polysilicon films combined with plated metal fingers;Solar Energy Materials and Solar Cells;2023-08
3. Poly-Si thickness and temperature dependent oxide disruption induced by penetration of the interfacial oxide in (p) poly-Si/SiOx passivating contacts;Solar Energy Materials and Solar Cells;2022-10
4. Measurement of poly-Si film thickness on textured surfaces by X-ray diffraction in poly-Si/SiO passivating contacts for monocrystalline Si solar cells;Solar Energy Materials and Solar Cells;2022-03
5. Localisation of front side passivating contacts for direct metallisation of high-efficiency c-Si solar cells;Solar Energy Materials and Solar Cells;2022-01
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