Over 700 mV IBC Solar Cell by Optimizing Front Surface Field Passivation-Reference-Cited by-同舟云学术

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Over 700 mV IBC Solar Cell by Optimizing Front Surface Field Passivation

Published:2023-01 Issue:1 Volume:13 Page:56-60
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Gao Jiaqing¹^ORCID,Qu Xiaoyong¹,Guo Yonggang¹,Wu Xiang¹,Chen Ning²^ORCID,Feng Xianfeng³,Zhang Bo¹,Zhang Tianjie¹,Liu Hongdong¹

Affiliation:

1. Qinghai Huanghe Hydropower Development Co., Ltd., Xi'an Solar Power Branch, Xi'an, China

2. Advanced Cell Concepts, International Solar Energy Research Center Konstanz e. V., Konstanz, Germany

3. Department of Electronic Engineering, Xi'an University of Technology, Shananxi, China

Funder

State Power Investment Group

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/10015785/09996139.pdf?arnumber=9996139

Reference16 articles.

1. A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P

2. Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation

3. Improved quantitative description of Auger recombination in crystalline silicon

4. Large-Area n-Type PERT Solar Cells Featuring Rear p+ Emitter Passivated by ALD Al2 O3

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