Investigation of Light-Induced Degradation in B-Doped Mono-Like Silicon PERC Cells by a Cycling Test With Light Soaking and Dark Annealing
Author:
Affiliation:
1. National Institute of Advanced Industrial Science and Technology, Koriyama, Japan
2. Kyocera Corporation, Kyoto, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/5503869/10015785/09999133.pdf?arnumber=9999133
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4. Light-induced lifetime degradation in high-performance multicrystalline silicon: Detailed kinetics of the defect activation
5. Towards a test standard of light and elevated temperature-induced degradation;kersten;PV Tech Power,2020
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