Quantification of Iron in Boron-Doped Silicon Solar Cells From Open Circuit Voltage Measurements-Reference-Cited by-同舟云学术

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Quantification of Iron in Boron-Doped Silicon Solar Cells From Open Circuit Voltage Measurements

Published:2022-07 Issue:4 Volume:12 Page:937-947
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Herguth Axel¹^ORCID

Affiliation:

1. Department of Physics, University of Konstanz, Konstanz, Germany

Funder

German Federal Ministry for Economic Affairs and Climate Action

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/9801835/09766217.pdf?arnumber=9766217

Reference26 articles.

1. On the meaning(fullness) of the intensity unit ‘suns’ in light induced degradation experiments

2. Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping

3. Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon

4. Statistics of the Recombinations of Holes and Electrons

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