Impact of Boron Doping Concentration on Tunnel Oxide Passivated Contact in Front Surface for N-Type Poly-Si Based Passivated Contact Bifacial Solar Cells
Author:
Affiliation:
1. College of Physics Science and Technology, Hebei University, Baoding, China
2. State Key Laboratory of Photovoltaic Materials and Technology, Yingli Energy (China) Co., Ltd., Baoding, China
Funder
National Key R&D Program of China
Hebei University
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/5503869/9760484/09730915.pdf?arnumber=9730915
Reference32 articles.
1. Double-Sided Passivated Contacts for Solar Cell Applications: An Industrially Viable Approach Toward 24% Efficient Large Area Silicon Solar Cells
2. The application of poly-Si/SiOx contacts as passivated top/rear contacts in Si solar cells
3. Study of Pinhole Conductivity at Passivated Carrier-selected Contacts of Silicon Solar Cells
4. Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO 2 layers
5. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
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