HMOS III technology

Author:

Atwood G.E.,Dun H.,Langston J.,Hazani E.,So E.Y.,Sachdev S.,Fuchs K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. EOS Endurance Power Circuits without Depletion Mode Devices;2022 IEEE International Conference on Consumer Electronics - Taiwan;2022-07-06

2. Microprocessors - The First Twelve Years;Real Time Microcomputer Control of Industrial Processes;1990

3. Electron trapping in thin gate insulators prepared using a two‐step silicon oxidation procedure;Journal of Applied Physics;1987-02

4. Characterization of metal‐oxide‐semiconductor transistors with very thin gate oxide;Journal of Applied Physics;1986-02

5. MOS technology for VLSI;Microelectronics Reliability;1984-01

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