Gamma degradation of light-emitting diodes based on heterostructures AlGaInP
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/6353005/6357478/06357528.pdf?arnumber=6357528
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Degradation of InGaN LEDs by Proton Radiation;2023 8th International Conference on Business and Industrial Research (ICBIR);2023-05-18
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5. LEDs based upon AlGaInP heterostructures with multiple quantum wells: comparison of fast neutrons and gamma-quanta irradiation;IOP Conference Series: Materials Science and Engineering;2018-05
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