Fully-Depleted Silicon-on-Insulator (FDSOI) Based Complementary Phototransistors for In-Sensor Vector-Matrix Multiplication
Author:
Affiliation:
1. School of Integrated Circuits, Peking University, Beijing, China
Funder
National Key Research and Development Plan
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10081123/10050507.pdf?arnumber=10050507
Reference23 articles.
1. Controlled Optoelectronic Response in van der Waals Heterostructures for In‐Sensor Computing
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4. Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision
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1. Noise Analysis of Readout Chain in FDSOI-based 1T-APS for In-Sensor Vector-Matrix-Multiplication;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
2. Gate-controlled gain tuning of fully depleted silicon-on-insulator-based 1 T pixel for in-sensor white balance;Japanese Journal of Applied Physics;2024-02-05
3. A Compact Model of FDSOI based 1-T Pixel Sensor for Design of In-sensor Computing;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27
4. A compact model for the well-depleted 1-T pixel sensor based on silicon-on-insulator technology;Japanese Journal of Applied Physics;2023-07-01
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