Macaroni Channel-Nanowire-Field Effect Transistor (MC-NW-FET) for Gate Induced Drain Leakage (GIDL) Reduction Application
Author:
Affiliation:
1. Delhi Technological University,Department of Electronics and Communication Engg.,New Delhi,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10032824/10032825/10032964.pdf?arnumber=10032964
Reference10 articles.
1. Dual metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to reduce gate induced drain leakages (GIDL) for improved analog performance
2. Characteristic Length of Macaroni Channel MOSFET
3. Asymmetric Gate Stack Triple Metal Gate All Around MOSFET (AGSTM) for Improved Analog Applications
4. Temperature-Dependent Gate-Induced Drain Leakages Assessment of Dual-Metal Nanowire Field-Effect Transistor—Analytical Model
5. Novel design to improve band to band tunneling and gate induced drain leakages (GIDL) in cylindrical gate all around (GAA) MOSFET
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