Review on Wide Band Gap Semiconductor
Author:
Affiliation:
1. Narula Institute of Technology,Department of Electronics and Communication Engineering,Kolkata,India
2. Narula Institute of Technology,Kolkata,India
3. Adamas University,Department of Physics,Kolkata,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10032824/10032825/10032898.pdf?arnumber=10032898
Reference25 articles.
1. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
2. A 177–183 GHz High-Power GaN-Based Frequency Doubler With Over 200 mW Output Power
3. Photonic integration of uniform GaAs nanowires in hexagonal and honeycomb lattice for broadband optical absorption
4. A Brief History of GaAs Technology at the GaAs IC Symposium and a Look Ahead to the 2015 CSICS [Speakers' Corner]
5. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
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