Unified Surface Potential Based Analytical Modeling of Symmetrical Double Gate AlGaN/GaN MOS-HEMT for Label-Free Bio-Sensing
Author:
Affiliation:
1. GITAM (Deemed to be University),EECE, School of Technology,Bengaluru,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10032824/10032825/10032952.pdf?arnumber=10032952
Reference10 articles.
1. Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices
2. An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling
3. Compact Modeling of Charge, Capacitance, and Drain Current in III–V Channel Double Gate FETs
4. 80 nm polysilicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications;buchanan;Proc IEEE Int Electron Devices Meeting,2000
5. Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
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