Comparative Analysis of Short Channel Effects in Dopingless Charge Plasma Based Nanowire FET
Author:
Affiliation:
1. Bangladesh University of Engineering and Technology,Dept. of Electrical and Electronic Engineering,Dhaka,Bangladesh,1205
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10032824/10032825/10032885.pdf?arnumber=10032885
Reference20 articles.
1. Design of Dopingless GaN Nanowire FET with Low ‘Q’ for High Switching and RF Applications
2. Investigation of Cylindrical Channel Gate All Around InGaAs/InP Heterojunction Heterodielectric Tunnel FETs
3. Performance analysis of doping less nanotube tunnel field effect transistor for high speed applications;rajesh;Silicon,2022
4. Performance Improvement of Dopingless Transistor for Low Power Applications
5. GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. An Investigation on RF Propagation in the Middle of Body Area Networks in Virtual Reality;2023 International Conference on Information and Communication Technology for Sustainable Development (ICICT4SD);2023-09-21
2. Impact of Temperature on Dielectric Properties of BiFeO3 Nanoparticles for PV Applications;2023 IEEE IAS Global Conference on Emerging Technologies (GlobConET);2023-05-19
3. Effect of External Electric Field on Stability and Electrical Properties of Monolayer WSTe Alloy;2022 4th International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE);2022-12-29
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3