High-bandwidth OEIC receivers using heterojunction bipolar transistors: Design and demonstration-Reference-Cited by-同舟云学术

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High-bandwidth OEIC receivers using heterojunction bipolar transistors: Design and demonstration

Published:1993 Issue:10 Volume:11 Page:1601-1614
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Pedrotti K.D.,Pierson R.L.,Sheng N.H.,Nubling R.B.,Farley C.W.,Chang M.F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx1/50/6394/00249902.pdf?arnumber=249902

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photodetectors;Analysis and Design of Transimpedance Amplifiers for Optical Receivers;2017-09-22

2. Spectral response modelling of GaAs-based heterojunction phototransistors for short wavelength detection;IET Optoelectronics;2010-04-01

3. On the Performance Analysis and Design of an Integrated Front-End PIN/HBT Photoreceiver;IEEE Journal of Quantum Electronics;2004-01

4. Photoemission studies on heterostructure bipolar transistors;Solid-State Electronics;1999-08

5. 20 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver;Electronics Letters;1996

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