Performance Comparison of s-Si, In0.53Ga0.47As, Monolayer BP- and WS2-Based n-MOSFETs for Future Technology Nodes—Part II: Circuit-Level Comparison
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Published:2019-08
Issue:8
Volume:66
Page:3614-3619
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ISSN:0018-9383
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Container-title:IEEE Transactions on Electron Devices
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language:
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Short-container-title:IEEE Trans. Electron Devices
Author:
Agarwal Tarun KumarORCID,
Rau Martin,
Radu Iuliana,
Luisier MathieuORCID,
Dehaene WimORCID,
Heyns Marc
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials