Strain-Engineered Asymmetrical Superlattice Si/Si1–x Ge x Nano-ATT $\langle$ p++-n-n−-n++$\rangle$ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain-Reference-Cited by-同舟云学术

Strain-Engineered Asymmetrical Superlattice Si/Si1–x Ge x Nano-ATT $\langle$ p++-n-n−-n++$\rangle$ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain

Published:2019-08 Issue:8 Volume:66 Page:3659-3667
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chatterjee Sulagna^ORCID,Mukherjee Moumita

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8768425/08753518.pdf?arnumber=8753518

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