Polycrystalline In–Ga–O Thin-Film Transistors Coupled With a Nitrogen Doping Technique for High-Performance UV Detectors-Reference-Cited by-同舟云学术

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Polycrystalline In–Ga–O Thin-Film Transistors Coupled With a Nitrogen Doping Technique for High-Performance UV Detectors

Published:2020-01 Issue:1 Volume:67 Page:140-145
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cheng Yen-Chi^ORCID,Chang Sheng-Po^ORCID,Chen Ih-Chin,Tsai Yen-Lin,Cheng Tien-Hung,Chang Shoou-Jinn^ORCID

Funder

Ministry of Science and Technology

National Cheng Kung University

Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8945448/08933340.pdf?arnumber=8933340

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance;Japanese Journal of Applied Physics;2024-01-04

2. Tunable synaptic behaviors of solution-processed InGaO films for artificial visual systems;Materials Horizons;2024

3. Low-voltage solution-processed P-type Mg-doped CuI thin film transistors with NAND logic function;Applied Physics Letters;2023-05-22

4. Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation;Micromachines;2022-04-14

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