Consistent Surface-Potential-Based Modeling of Drain and Gate Currents in AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Consistent Surface-Potential-Based Modeling of Drain and Gate Currents in AlGaN/GaN HEMTs

Published:2020-02 Issue:2 Volume:67 Page:455-462
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Albahrani Sayed Ali¹^ORCID,Heuken Lars²^ORCID,Schwantuschke Dirk¹,Gneiting Thomas³^ORCID,Burghartz Joachim N.²^ORCID,Khandelwal Sourabh⁴^ORCID

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg im Breisgau, Germany

2. Institut für Mikroelektronik Stuttgart (IMS-CHIPS), Stuttgart, Germany

3. AdMOS GmbH, Frickenhausen, Germany

4. School of Engineering, Macquarie University, Sydney, NSW, Australia

Funder

German Federal Ministry of Education and Research through the framework of the Project GaNScan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8970632/08957097.pdf?arnumber=8957097

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs;physica status solidi (a);2024-01-31

2. Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor;Micromachines;2023-10-19

3. On large-signal modeling of GaN HEMTs: past, development and future;Chip;2023-09

4. Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs;Micromachines;2022-12-28

5. Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress;Chinese Physics B;2022-10-01

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