On oxide—nitride interface traps by thermal oxidation of thin nitride in metal-oxide-nitride-oxide-semiconductor memory structures
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31949/01485685.pdf?arnumber=1485685
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