Minority-carrier lifetime measurements on silicon solar cells using Iscand Voctransient decay
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31902/01483854.pdf?arnumber=1483854
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Intensity Dependent Transient Response of Amorphous Photodiode and Solar Cell;Defect and Diffusion Forum;2022-10-20
2. Open-Circuit Voltage Decay Simulations on Silicon and Gallium Arsenide p-n Homojunctions: Design Influences on Bulk Lifetime Extraction;Microelectronics Journal;2020-07
3. Characterization of Photovoltaic Cells Using Time Domain Voltage Decay Analysis;2019 IEEE AFRICON;2019-09
4. Separation of the surface and bulk recombination in silicon by means of transient photoluminescence;Applied Physics Letters;2017-01-23
5. Determination of minority carrier lifetime in a finite base HgCdTe photodiode: Pulse recovery technique;J INFRARED MILLIM W;2014
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